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  last update: 28/03/2017

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Lectures (in english):

• M. Auf der Maur (Department of Electronic Engeneering, Rome) : Physics based simulation of nitride devices
• F. Bechstedt (Friedrich-Schiller-Universität, Jena) : Spontaneous polarization and QCSE in III-N heterostructures
• P. Boucaud (Centre de Nanosciences et de Nanotechnologies, Orsay) : Basics of clean-room processing, specificities of III-Ns and practical examples
• C. Bougerol (NPSC-Equipe mixte CEA/CNRS/UGA, Institut Néel, Grenoble) : Structural Characterization of Nitrides : Electron Microscopy (Transmission)
• S. Fernández-Garrido (Paul-Drude-Institut, Berlin) : Growth and Optical Properties of GaN Nanowires
• B. Gayral (CEA, Grenoble) : III-N Polaritonics
• B. Gil (Laboratoire C. Coulomb, Montpelier) : Fundamentals of semiconductor band structure, the case of III-Ns
• N. Grandjean (Institute of physics EPFL, Lausanne) :
  • Growth (thin films) 1/2
  • Growth 2/2
• E. Matioli (EPFL, Lausanne) : Basics of III-Nitride transistors
• M. Nemoz (CRHEA, Valbonne) : Structural characterization IX-ray diffraction
• H. Riechert (Paul-Drude-Institut, Berlin) : Light Emitting Diodes
• C. Weisbuch (Materials Department, Santa Barbara - Laboratoire de Physique de la Matière Condensée, Paris : III-N, why is it a special class of semiconductors ?

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