Lectures (in english):

M. Auf der Maur (Department of Electronic Engineering, University of Rome “Tor Vergata”, Italy) : Physics based simulation of nitride devices
C. BOUGEROL (NPSC-Equipe mixte CEA/CNRS/UJF, Institut Néel CNRS, Grenoble) : Structural Characterization of Nitrides : Electron Microscopy (Transmission)
B. Corbett (Tyndall National Institute, Cork, Ireland) : Processing of GaN materials for device applications)
Y. Cordier (CNRS-CRHEA, Valbonne) : Compounds, transport
J.C. De Jaeger (IEMN, Lille) : Microwave power devices and circuits
G. Feuillet (CEA/LETI, Grenoble) : III- Nitride compounds Among Wide Band Gap Semiconductors
B. Gayral (CEA, Grenoble) : Optical properties
B. Gil (L2C CNRS et Université, Montpellier) : Optical properties of nitrides 1
N. Grandjean (EPFL, Lausanne) : Growth
- Part 1 : generalities
- Part 2 : growth of III/V nitrides
M. Nemoz (CNRS-CRHEA, Valbonne) : Summer School on the physics and applications of nitrides
R. Taylor (Department of Physics, University of Oxford) : Nanophotonics
M. Uren (Centre for Device Thermography and Reliability, Bristol) : Electronic Characterization

Some pictures: