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Lectures (in english):
- C. Brylinski (LMI, Lyon, France): Power
electronics (3,4 Mo)
- C. Bougerol (Néel Institute, Grenoble, France): Structural
characterization II (6,43 Mo)
- S. Delage (III-V Lab, Palaiseau, France): Microwave
devices (16 Mo)
- G. Feuillet (CEA, Grenoble, France): GaN
vs other materials (5,14 Mo)
- B. Gayral (CEA, Grenoble, France): Optics
II (4,79 Mo)
- N. Grandjean (EPFL, Lausanne-Switzerland): Growth
(21 Mo)
- J.C. Harmand (LPN, Marcoussis, France): Nanowires
(12,4 Mo)
- M. Leroux (CRHEA, Valbonne, France): Optics
I (3,96 Mo)
- M. Nemoz (CRHEA, Valbonne, France): Structural
characterization I (2,66 Mo)
- R. Resta (Trieste University-Italy): Piezoelectricity
(9,65 Mo)
- M. Strassburg (OSRAM-Germany): Optical
devices (10,7 Mo)
- M. Stutzmann (WSI, Munich, Germany): Bio-sensors
(5 Mo)
- M.Tchernycheva (IEF, Orsay, France): Optics
III (25,9 Mo)
- D. Théron (IEMN, Lille, France): Nems/Mems
(4,85 Mo)