Publications et brevets
Les publications de GaNeX doivent impérativement mentionner
le soutien de GANEX, par exemple sous la forme suivante :
We acknowledge support from GANEX (ANR-11-LABX-0014). GANEX belongs to the public funded ‘Investissements d’Avenir’ program managed by the French ANR agency.
We acknowledge support from GANEX (ANR-11-LABX-0014). GANEX belongs to the public funded ‘Investissements d’Avenir’ program managed by the French ANR agency.
Les publications sont classées par année ci-dessous et les brevets regroupés en bas de cette page
2022
- Thermal Stability of Thin hexagonal Boron Nitride grown by MOVPE on Epigraphene
Vishnu Ottapilakkal, Abhishek Juyal, Suresh Sundaram, Phuong Vuong, Adama Mballo, Lin Beck, Grant Nunn, Yang Su, Annick Loiseau, Frédéric Fossard, Jean-Sébastien Mérot, Thomas H Kauffmann, David Chapron, Jean-Paul Salvestrini, Paul L. Voss, Walt A de Heer, Claire Berger, Abdallah Ougazzaden
Journal of Crystal Growth, accepted, 2022 - The low temperature limit of the excitonic Mott density in GaN: an experimental reassessment >
Léo Mallet-Dida, Pierre Disseix, François Réveret, François Médard, Blandine Alloing, Jesús Zúñiga-Pérez and Joël Leymarie
New Journal of Physics, Volume 24, March 2022 - Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template.
Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub and Philippe Ferrandis.
J. Appl. Phys. 131, 124501 (2022) - Porous Nitride Light-Emitting Diodes
Nun~o Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, Franc¸ois H Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, Maria Tchernycheva
ACS Photonics, Volume 9, Issue 4, Pages 1256-1263 (2022) - A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
Patrick Quach, Arnaud Jollivet, Andrey Babichev, Nathalie Isac, Martina Morassi, Aristide Lemaitre, PA Yunin, Eric Frayssinet, Philippe de Mierry, Mathieu Jeannin, Adel Bousseksou, Raffaele Colombelli, Maria Tchernycheva, Yvon Cordier, FH Julien
Applied Physics Letters, Volume 120, Issue 17, Pages 171103 (2022) - DFT analysis of crystal polarity on graphene surface
Alexander Pavlov, Alexey Mozharov, Yury Berdnikov, Camille Barbier, Jean-Christophe Harmand, Maria Tchernycheva, Roman Polozkov, Ivan Mukhin
Journal of Physics: Conference Series, Volume 2015, Issue 1, Pages 012105 (2021) - Low-loss GaN-on-insulator platform for integrated photonics
M. GROMOVYI, M. EL KURDI, X. CHECOURY, E. HERTH, F. TABATABA-VAKILI, N. BHAT, A. COURVILLE, F. SEMOND, AND P. BOUCAUD
OpticsExpress Vol.30, No.12. / 20737 (2022) - Why and how In composition fluctuations appear in InGaN ?
Jean-Yves Duboz, Wanda Isnard, Jesus Zuniga-Perez, and Jean Massies
J. of Crystal Growth - Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes
Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano
Phys. Status Solidi A, 219 (7), 2200055 (2022) - Towards charge control of self-assembled GaN quantum dots at room temperature
C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck, Coulomb blockade
Appl. Phys. Lett. 120, 012105 (2022) - Modulated Rashba-Dresselhaus Spin-Orbit Coupling for Topology Control and Analog Simulations
Pavel Kokhanchik, Dmitry Solnyshkov, Thilo Stöferle, Barbara Pietka, Jacek Szczytko, and Guillaume Malpuech
Phys. Rev. Lett. 129, 246801 (2022). - Angular-dependent Klein tunneling in photonic graphene
Z. Zhang, Y. Feng, F. Li, S. Kohiakhin, C. Li, F. Liu, Y. Zhang, M. Xiao, G. Malpuech, D. Solnyshkov
Phys Rev. Lett., 139, 223901, (2022). - Ridge Polariton Laser : Different from a Semiconductor Edge-Emitting Laser
H. Souissi, M. Gromovyi, T. Gueye, C. Brimont, L. Doyennette, D.D Solnyshkov, G. Malpuech, E. Cambril, S. Bouchoule, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, and T. Guillet
Phys. Rev. Applied 18, 044029 (2022). - Annihilation of exceptional points from different Dirac valleys
M. Król, P. Oliwa, M. Kedziora, K. Lempicka-Mirek, M. Muszynki, R. Mazur, P. Morawiak, W. Piecek, P. Kula, W. Bardyszewski, P. G. Lagoudakis, D. D. Solnyshkov, G. Malpuech, B. Pietka, J. Szczytko
Nature Commun. 13, 5240, (2022). - Helical Polariton Lasing from Topological Valleys
in an Organic Crystalline Microcavity
Teng Long, Xuekai Ma, Jiahuan Ren, Feng Li, Qing Liao,Stefan Schumacher, Guillaume Malpuech, Dmitry Solnyshkov,Hong bing Fu
Advanced Science (2022). - Domain-Wall Topology Induced by Spontaneous Symmetry Breaking in Polariton Graphene
D. D. Solnyshkov, C. Leblanc, I. Septembre, and G. Malpuech
Phys. Rev. Lett. 129, 066802 (2022). - Giant effective Zeeman splitting in a monolayer semiconductor realized by spin-selective strong light–matter coupling
T.P. Lyons, D.J. Gillard, C. Leblanc, J. Puebla, D.D. Solnyshkov, L Klompmaker, IA Akimov, C Louca, P Muduli, A Genco, M Bayer, Y Otani, G Malpuech, AI Tartakovskii
Nature Photonics, 16, 632, (2022). - Love might be a second order phase transition
D. Solnyshkov, G. Malpuech
Physics Letters A, 128245, (2022). - Gap solitons in a one-dimensional driven-dissipative topological lattice
Nicolas Pernet, Philippe St-Jean, Dmitry D Solnyshkov, Guillaume Malpuech, Nicola Carlon Zambon, Quentin Fontaine, Bastian Real, Omar Jamadi, Aristide Lemaître, Martina Morassi, Luc Le Gratiet, Téo Baptiste, Abdelmounaim Haro uri, Isabelle Sagnes, Alberto Amo, Sylvain Ravets, Jacqueline Bloch
Nature Physics, 18, 678 (2022). - Imaging lattice switching with Talbot effect in reconfigurable non-Hermitian photonic graphene
Zhaoyang Zhang, Yuan Feng, Shaohuan Ning, G Malpuech, DD Solnyshkov, Zhongfeng Xu, Yanpeng Zhang, Min Xiao
Photonic Research, 10, 958, (2022). - Condensation of 2D exciton-polaritons in an open-access microcavity
Feng Li, Yiming Li, L Giriunas, M Sich, DD Solnyshkov, G Malpuech, AAP Trichet, JM Smith, E Clarke, MS Skolnick, DN Krizhanovskii
Journal of applied physics, 131, 093101, (2022). - High frequency GaN HEMT Modeling with ASM-HEMT>
Raphaël Sommet, Jose Anderson Silva dos Santos, Alexandre Santos, Jean-Christophe Nallatamby
17th European Microwave Integrated Circuits Conference (EuMiC), Sep 2022, Milan, Italy - Etude de l’«Advanced Spice Model» pour la modélisation des transistor HEMT GaN
Alexandre Santos, Julien Frederic, Florent Gaillard, Jean-Christophe Nallatamby, Christopher Chang, Raphaël Sommet
XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France hal-03745063 - Influence
of Sapphire Substrate Orientation on Van der Waals Epitaxy of III-Nitrides
on 2D Hexagonal Boron Nitride: Implication for Opto-electronic Devices
P. Vuong, S. Sundaram, V. Ottapilakkal, G. Patri- arche, L. Largeau, S. Ashutosh, A. Mballo, T. Moudakir, S. Gautier, P. Voss, J.P. Salvestrini, and A. Ougazzaden
ACS Applied Nano Materials, (2022)
2021
- Short
term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN
HEMTs
AO Z., MENEGHINI M., HARROUCHE K., KABOUCHE R., CHIOCCHETTA F., OKADA E., RAMPAZZO F., DE SANTI C., MEDJDOUB F., MENEGHESSO G., ZANONI E.
Microelectronics Reliability, Elsevier, 2021, 123, pp.114199 - Above
70% PAE in Q-band with AlN/GaN HEMTs structures
HARROUCHE K., KABOUCHE R., OKADA E., MEDJDOUB F.
Proceedings of the 44th Workshop on Compound - GaN HEMTs: Increasing Q-band efficiency
Kathia HARROUCHE, Riad KABOUCHE and Farid MEDJDOUB
Cover of Compound Semiconductors magazine, VOLUME 27 ISSUE II 2021 - Semiconductor Devices and Integrated Circuits
WOCSDICE 2021, Bristol, UK, june 14-17, 2021 - Stretchable
Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires
and Carbon Nanotube Films
F. M. Kochetkov, V. Neplokh, V. A. Mastalieva, S. Mukhangali, A. A. Vorobev, A. V. Uvarov, F. E. Komissarenko, D. M. Mitin, A. Kapoor, J. Eymery, N. Amador-Mendez, C. Durand, D. Krasnikov, A. G. Nasibulin, M. Tchernycheva and I. S. Mukhin
Nanomaterials, 11, 1503 (2021) - Solubility
Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation
Down to the Nanoscale
C. Bougerol, E. Robin, E. Di Russo, E. Bellet-Amalric, V. Grenier, A. Ajay, L. Rigutti and E. Monroy
ACS Appl. Mater. Interfaces, 13, 3 (2021) - Influence
of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides
on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices
P. Vuong, S. Sundaram, V. Ottapilakkal, G. Patriarche, L. Largeau, A. Srivastava, A. Mballo, T. Moudakir, S. Gautier, P. L. Voss, J.-P. Salvestrini, and A. Ougazzaden
ACS Appl. Nano Mater. XXXX, XXX, XXX-XXX - Rhombohedral
and Turbostratic Boron Nitride: X-ray Diffraction and Photoluminescence
Signatures
M. Moret, A. Rousseau, P. Valvin, S. Sharma, L. Souqui, H. Pedersen, H. Högberg, G. Cassabois, J. Li, J. H. Edgar, and B. Gil
Appl. Phys. Lett. 119, 262102 (2021) - Monolayer
Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet
A. Rousseau, L. Ren, A. Durand, P. Valvin, B. Gil, K. Watanabe, T. Taniguchi, B. Urbaszek, X. Marie, C. Robert, and G. Cassabois
Nano Lett. 21, 10133 (2021) - Flat
Bands and Giant Light-Matter Interaction in Hexagonal Boron Nitride
C. Elias, G. Fugallo, P. Valvin, C. L’Henoret, J. Li, J. H. Edgar, F. Sottile, M. Lazzeri, A. Ouerghi, B. Gil, and G. Cassabois
Phys. Rev. Lett. 127, 137401 (2021) - Band
Gap Measurements of Monolayer H-BN and Insights into Carbon-Related Point
Defects
R. J. P. Román, F. J. R. C. Costa, A. Zobelli, C. Elias, P. Valvin, G. Cassabois, B. Gil, A. Summerfield, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov, and L. F. Zagonel
2D Mater. 8, 044001 (2021) - Determination
of the Optical Bandgap of the Bernal and Rhombohedral Boron Nitride Polymorphs
A. Rousseau, M. Moret, P. Valvin, W. Desrat, J. Li, E. Janzen, L. Xue, J. H. Edgar, G. Cassabois, and B. Gil
Phys. Rev. Materials 5, 064602 (2021) - Whispering-Gallery
Mode InGaN Microdisks on GaN Substrates
H. Zi, W.Y. Fu and H.W. Choi, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J-Y. Duboz, Ph. Boucaud, F. Semond and H. W. Choi
Optics Express 29, 21280 (2021) - Experimental
investigation of a non-Abelian gauge field in 2D perovskite photonic platform
L. Polimeno, A. Fieramosca, , G. Lerario, L. De Marco, M. De Giorgi, D. Ballarini, L. Dominici, V. Ardizzone, M. Pugliese, C.T. Prontera, V. Maiorano, G. Gigli, C. Leblanc, G. Malpuech, D.D. Solnyshkov, D. Sanvitto
Optica (2021) - Universal semiclassical equations based on the quantum metric for a
two band system
C. Leblanc, G. Malpuech, DD. Solnyshkov
Phys. Rev. B, 104, 134312, (2021) - Tuning
of the Berry Curvature in 2D perovskite polaritons
L. Polimeno, G. Lerario, M. De Giorgi, L. De Marco, L. Dominici, F. Todisco, A. Coriolano, V. Ardizzone, M. Pugliese, C. T. Prontera, V. Maiorano, A. Moliterni, C. Giannini, V. Olieric, G. Gigli, D. Ballarini, Q. Xiong, A. Fieramosca D.D. Solnyshkov,G. Malpuech and D. Sanvitto
Nature Nanotech, (2021) - Experimental measurement of the divergent quantum metric of an exceptional
point
Qing Liao, Charly Leblanc, Jiahuan Ren, Feng Li, Yiming Li, Dmitry Solnyshkov, Guillaume Malpuech, Jiannian Yao, Hongbing Fu
Phys. Rev. Lett. 127, 107402 (2021) - Kibble-Zurek mechanism in polariton graphene
D. Solnyshkov, L. Bessonart, A. Nalitov, G. Malpuech
Phys. Rev. B 104, 035423, (2021) - Quantum metric and wavepackets at exceptional points in non-Hermitian
systems
D.D. Solnyshkov, L. Bessonart, C. Leblanc, A. Nalitov, F. Li, G. Malpuech
Phys. Rev. B 103, 125302, (2021) - Topological turbulence in spin-orbit-coupled driven-dissipative quantum
fluids of light generates high angular momentum states
S. V. Koniakhin, G. Malpuech, D.D.Solnyshkov, A.V. Nalitov
Europhysics letters, 133, 66001 (2021) - Crystal
polarity discrimination in GaN nanowires on graphene
A. Pavlov, A. Mozharov, Y. Berdnikov, C. Barbier, J.-C. Harmand, M. Tchernycheva, R. Polozkov and I. Mukhin
J. Mater. Chem. C, 2021,9, 9997-10004 - Stability
of the threshold voltage in fluorine-implanted normally off AlN/GaN HEMTs
co integrated with commercial normally on GaN HEMT technology
F. Albany, F. Lecourt, E. Walastak, N. Defrance, A. Curutchet, H. Maher, Y. Cordier, N. Labat, N. Malbert
Microelectronics Reliability Volume 126, November 2021, 114291 - Characterization
of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched
in TMAH Solution
N. Al Taradeh, E. Frayssinet, C. Rodriguez, F. Morancho, C. Sonneville, L.-V. Phung, A. Soltani, F. Tendille, Y. Cordier, H. Maher
Energies 2021, 14, 4241 - Toward
Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires
L. Jaloustre, S. Le Denmat, T. Auzelle, M. Azadmand, L. Geelhaar, F. Dahlem, and R. Songmuang
ACS Appl. Nano Mater. 2021, 4, 1, 43–52 - Investigation
of electrical activity at the AlN/Si interface using scanning capacitance
microscopy and scanning spreading resistance microscopy
M. Bah, D. Valente, M. Lesecq, N. Defrance, M. Garcia Barros, J-C. DeJaeger, E. Frayssinet, R. Comyn, T.H. Ngo, D. Alquier, Y. Cordier
Wocsdice Exmatec 2021 (Vol. 217, pp. 131-132). - Mapping
of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions
for InGaN/GaN blue emitting light emitting diodes by off-axis electron
holography correlated with structural, chemical and optoelectronic characterization
D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, N. Rochat, G. Feuillet, A. Courville, S. Vézian and J.Y. Duboz
Journal of Applied Physics 130, 025704 (2021) - Monolithic
Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by
One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer
Soufiane Karrakchou, Suresh Sundaram, Rajat Gujrati, Phuong Vuong, Adama Mballo, Hibat E Adjmi, Vishnu Ottapilakkal, Walid El Huni, Karim Bouzid, Gilles Patriarche, Ali Ahaitouf, Paul L Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
ACS Appl. Electron. Mater. 2021, 3, 6, 2614–2621 - MOVPE
of GaN-based mixed dimensional heterostructures on wafer-scale layered
2D hexagonal boron nitride—A key enabler of III-nitride flexible
optoelectronics
Suresh Sundaram, Phuong Vuong, Adama Mballo, Taha Ayari, Soufiane Karrakchou, Gilles Patriarche, Paul L Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
APL Materials 9, 061101 (2021) - Natural
Boron and 10B-Enriched Hexagonal Boron Nitride for High- Sensitivity Self-Biased
Metal-Semiconductor-Metal Neutron Detectors
A. Mballo, A. Ahaitouf, S. Sundaram, A. Srivastava, V. Ottapilakkal, R. Gujrati, P. Vuong, S. Karrakchou, M. Kumar, X. Li, Y. Halfaya, S.Gautier, P. L. Voss, J. P. Salvestrini, and A. Ougazzaden
ACS Omega, https://doi.org/10.1021/acsomega.1c05458 (2021) - AlGaN
Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
I. Abid, J. Mehta, Y. Cordier, J. Derluyn, S. Degroote, H. Miyake and F. Medjdoub
Electronics 2021, 10, 635. https://doi.org/10.3390/electronics10060635 (2021) - Nontrivial
band geometry in an optically active system
J. Ren, Q. Liao, F. Li, Y. Li, O. Bleu, G. Malpuech, J. Yao, H. Fu, D. Solnyshkov
Nature communications, 12, 1, (2021) - Analog
time machine in a photonic system
D.D. Solnyshkov and G. Malpuech
Phys. Rev. B, 103, 054303, (2021) - Comprehensive
model toward optimization of SAG In-rich InGaN nanorods by hydride vapor
phase epitaxy
H. Hijazi, M. Zeghouane, J. Jridi, E. Gil, D. Castelluci, V.G. Dubrovskii, C. Bougerol, Y. André and A. Trassoudaine
Nanotechnology, vol 32, 155601 (2021) - Dual-Color
Emission from Monolithic m-Plane Core-Shell InGaN/GaN Quantum Wells
A. Kapoor, V. Grenier, E. Robin, C. Bougerol, G. Jacopin, B. Gayral, M. Tchernycheva, J. Eymery, C. Durand
Adv. Photonics Res.. Accepted Author Manuscript 2000148. https://doi.org/10.1002/adpr.202000148 - Complexity
of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
Phys. Rev. B 103, 045308 – Published 26 January 2021 - New
barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high
electron mobility transistor normally-off transistor
F. Cozette, B. Hassan, C. Rodriguez, E. Frayssinet, R. Comyn, F. Lecourt, N. Defrance, N. Labat, F. Boone1, A. Soltani
Semicond. Sci. Technol. 36 034002 - AlGaN
channel High Electron Mobility Transistors with regrown ohmic contacts
I. Abid, J. Mehta, Y. Cordier, J. Derluyn, S. Degroote, H. Miyake and F. Medjdoub
Submitted to Electronics, MDPI - Towards
P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical
Measurements Analysis of hBN/AlGaN Heterojunctions
A. Mballo, A. Srivastava, S. Sundaram, P. Vuong, S. Karrakchou, Y. Halfaya , S. Gautier,P.L. Voss, A. Ahaitouf, J.P. Salvestrini, A. Ougazzaden
Nanomaterials (Basel, Switzerland). 2021 Jan;11(1). DOI: 10.3390/nano11010211
2020
- Short-term reliability of high-performance Q-band AlN/GaN HEMTs
KABOUCHE R., HARROUCHE K., OKADA E., MEDJDOUB F.
Proceedings of 58th IEEE International Reliability Physics Symposium, IRPS 2020 - Optimising GaN heterostructures for 5G
BEHET M., DERLUYN J., DEGROOTE S., GERMAIN M., MEDJDOUB F.
Compound Semiconductors, 26, 1, january/february 2020 - High power AlN/GaN HEMTs with record power-added-efficiency >70%
at 40GHz
HARROUCHE K., KABOUCHE R., OKADA E., MEDJDOUB F.
Proceedings of 2020 IEEE MTT-S International Microwave Symposium, IMS 2020, Los Angeles, CA, USA, august 4-6, 2020 - GaN-based HEMTs for millimeter-wave applications
HARROUCHE K., MEDJDOUB F., in Nitride semiconductor technology: power electronics and optoelectronic devices
Roccaforte F., Leszczynski M. (Eds)
ISBN 978-3-527-34710-0 ; Wiley-VCH (2020) chap. 3, 99-136 - An
advanced ageing methodology for robustness assessment of normally-off
AlGaN/GaN HEMT
F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, et al..
15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240
hal-03362260? - Control of the Mechanical Adhesion of III–V Materials Grown on
Layered h-BN
P. Vuong, S. Sundaram, A. Mballo, G. Patriarche, S. Leone, F. Benkhelifa, S. Karrakchou, T. Moudakir, S. Gautier, P. L. Voss, J.-P. Salvestrini, A. Ougazzaden
ACS Applied Materials & Interfaces, 12, 49 (2020) - Deep Ultraviolet Hyperspectral Cryomicroscopy in Boron Nitride: Photoluminescence
in Crystals with an Ultra-Low Defect Density
P. Valvin, T. Pelini, G. Cassabois, A. Zobelli, J. Li, J. H. Edgar, and B. Gil
IP Advances 10, 075025 (2020) - Selective Area Growth of GaN Nanowires on Graphene Nanodots
M. Morassi, N. Guan, V. G. Dubrovskii, Y. Berdnikov, C. Barbier, L. Mancini, L. Largeau, A. V. Babichev, V. Kumaresan, F. H. Julien, L. Travers, N. Gogneau, J.-C. Harmand and M. Tchernycheva
Cryst. Growth Des. 2020, 20, 2, 552–55 - Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes
N. Guan, N. Amador-Mendez, A. Kunti, A. Babichev, S. Das, A. Kapoor, N. Gogneau, J. Eymery, F. H. Julien, C. Durand and M. Tchernycheva
Nanomaterials, 10, 2271 (2020) - Nanoscale x-ray investigation of composition fluctuations in AlGaN
nanowires
M. Belloeil, M. G. Proietti, H. Renevier and B. Daudin
Nanotechnology, 31, 375709 (2020) - Assessment of AlGaN/AlN superlattices on GaN nanowires as active region
of electron-pumped ultraviolet sources
I. Dimkou, A. Harikumar, F. Donatini, J. Lähnemann, M. I. den Hertog, C. Bougerol, E. Bellet-Amalric, N. Mollard, A. Ajay, G. Ledoux, S. T. Purcell and E. Monroy
Nanotechnology, 31, 204001 (2020) - Correlated Electro-Optical and Structural Study of Electrically Tunable
Nanowire Quantum Dot Emitters
M. Spies, A. Ajay, E. Monroy, B. Gayral and M. I. den Hertog
Nano Lett., 20, 314 (2020) - In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene
C. Barbier, T. Zhou, G. Renaud, O. Geaymond, P. Le Fèvre, F. Glas, A. Madouri, A. Cavanna, L. Travers, M. Morassi, N. Gogneau, M. Tchernycheva, J.C. Harmand, and L. Largeau
Cryst. Growth Des., 20, 4013–4019 (2020) - 2D quantum turbulence in a polariton quantum fluid
S. Konhiakin, O. Bleu, G. Malpuech, D. Solnyshkov
Chaos Solitons and Fractals, 132,109574, (2020) - Measurment of the quantum geometric tensor and of the anomalous Hall
drift
A. Gianfrate, O. Bleu, L. Dominici, V. Ardizzone, M. De Giorgi, D. Ballarini, G. Lerario, K.W. West, L.N. Pfeiffer, D.D. Solnyskov, D. Sanvitto, G. Malpuech
Nature, 578, 381, (2020) - Spin Orbit coupling in Photonic graphene
Z. Zhang, S. Liang, F. Li, S., Y. Li, G. Malpuech, Y. Zhang, M. Xiao, and D. Solnyshkov
Optica, 5, 455 (2020) - Polariton relaxation and polariton nonlinearities in nonresonantly
cw pumped III-nitride slab waveguides
J. Ciers, D.D. Solnyshkov, G. Callsen, Y. Kuang, J.-F. Carlin, G. Malpuech, R. Butté, N. Grandjean
Phys. Rev B, 102, 155304, (2020) - Morphological Control of InN Nanorods by Selective Area Growth–hydride
Vapor-Phase Epitaxy
M. Zeghouane, G. Avit, Y. André, T. Talercio, P. Ferret, E. Gil, D. Castelluci, P. Disseix, J. Leymarie, E. Tournié and A. Trassoudaine
Crystal Growth & Design, 20(4), 2232-2239 (2020) - Formation of voids in selective area growth of InN nanowires in SiNx
on GaN templates
M. Zeghouane, Y. André, G. Avit, J. Jridi, C. Bougerol, P-M. Coulon, P. Ferret, D. Castelluci, E. Gil, P. Shields, V. G. Dubrovskii and A. Trassoudaine
Nano Futures, 4, 025002 (2020) - A
broadband ultraviolet light source using GaN quantum dots formed on hexagonal
truncated pyramid structures
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Journal of Physics D: Applied Physics, Volume 49, Number 44 (2016) - Flexible White Light Emitting Diodes Based on Nitride
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Semiconductors 50 (8), 1097-1101 (2016) - Electron beam induced current microscopy investigation
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2D Materials 4, 011004 (2016) - Superconductivity
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S. Sundaram, Y. El Gmili, R. Puybaret, X. Li, P. L. Bonanno, K. Pantzas, G. Patriarche, P. L. Voss, J. P. Salvestrini and A. Ougazzaden
Applied Physics Letters 107, 113105 (2015) - Investigation
of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires
A. Messanvi, H. Zhang, V. Neplokh, F. H. Julien, F. Bayle, M. Foldyna, C. Bougerol, E. Gautier, A. Babichev, C. Durand, J. Eymery, M. Tchernycheva
ACS Appl. Mater. Interfaces 2015, 7, 21898–21906 - Flexible
Light-Emitting Diodes Based on Vertical Nitride Nanowires
X. Dai, A. Messanvi, H. Zhang, C. Durand, J. Eymery, C. Bougerol, F. H. Julien, M. Tchernycheva
Nano Lett. 2015, 15, 6958–6964 - Substrate-Free
InGaN/GaN Nanowire Light-Emitting Diodes
V. Neplokh, A. Messanvi, H. Zhang, F. H. Julien, A. Babichev, J. Eymery, C. Durand, M. Tchernycheva
Nanoscale Res. Lett. 2015, 10, 447 - Effect
of the barrier thickness on the performance of multiple-quantum-well InGaN
photovoltaic cells
L. Redaelli, A. Mukhtarova, A. Ajay, A. Núñez-Cascajero, S. Valdueza-Felip, J. Bleuse, C. Durand, J. Eymery, and E. Monroy
Jpn. J. Appl. Phys. 54, 072302 (2015) - Nonpolar
m-plane GaN/AlGaN heterostructures with intersubband transitions in the
5–10 THz band
C.B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff, and E. Monroy
Nanotechnology 26, 435201 (2015) - Intersubband
transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength
infrared regions
C.B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, and E. Monroy
J. Appl. Phys. 118, 014309 (2015) - High
quality thick InGaN nanostructures grown by nanoselective area growth for
new generation photovoltaic devices
S. Sundaram, R. Puybret, X. Li, Y. El Gmili, J. Streque, K. Pantzas, G. Orsal, G. Patriarche, P.L. Voss, J.P. Salvestrini, A. Ougazzaden
Physica Status Solidii A 1-6, (2015) - Polariton
Z Topological Insulator
A.V. Nalitov, D.D. Solnyshkov, G. Malpuech
Phys. Rev. Lett. 114, 116401 (2015) - All-optical
controlled-NOT gate based on an exciton-polariton circuit
D.D. Solnyshkov, O. Bleu, G. Malpuech
Superlatt. Microst. 83, 466 (2015) - Spin-orbit
coupling for photons and polaritons in microstructures
V.G. Sala, D.D. Solnyshkov, I. Carusotto, T. Jacqmin, A. Lemaître, H. Terças, A. Nalitov, M. Abbarchi, E.
Galopin, I. Sagnes, J. Bloch, G. Malpuech, and A. Amo
Phys. Rev. X 5, 011034 (2015) - Vortex
Chain in a Resonantly Pumped Polariton Superfluid
T. Boulier, H. Terças, D.D. Solnyshkov, Q. Glorieux, E. Giacobino, G. Malpuech, A. Bramati
Scientific Reports 5, 9230 (2015) - Al(Ga)N/GaN
High Electron Mobility Transistors on Silicon
Y. Cordier
Phys. Stat. Sol. A 212 (2015) 1049-1058 - Growth
of semipolar (2021) GaN layers on patterned silicon (114) 1° off by Metal
Organic Vapor Phase Epitaxy
M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez, P. Vennéguès
Journal of Crystal Growth (2015) - Resonant
second harmonic generation in a gallium nitride two-dimensional photonic
crystal on silicon
Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, M. Mexis, F. Semond, and P. Boucaud.
Applied Physics Letters 106, 081105 (2015) - Reduction
of the thermal budget of AlGaN/GaN heterostructures grown on silicon: a
step towards the monolithic integration of GaN-HEMTs with CMOS.
R. Comyn, Y. Cordier, V. Aimez and H. Maher.
Physica Status Solidi A (2015) - Spin-Orbit
coupling and the optical spin Hall Effect in photonic Graphene
A. Nalitov, G. Malpuech, H. Terças and D. Solnyshkov
Phys. Rev. Lett. 114, 026803, (2015) - Highly
resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett. 106, 022401 (2015)
2014
- AlGaN/GaN
HEMTs with very thin buffer on Si (111) for nanosystems applications
P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Technol. 29 (2014) 115018, doi:10.1088/0268-1242/29/11/115018 - Polar
and semipolar GaN/Al 0.5 Ga 0.5 N nanostructures for UV light emitters
J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond.Sci. Technol. 29 084001 (2014) - GaN nanowire-based UV photodetectors
L. Rigutti et M. Tchernycheva
in “Wide Band Gap Semiconductor Nanowires for Optical Devices: The Particular Case of GaN and ZnO” edited by V. Consonni et G. Feuillet, p. 179, 22 pages, Wiley-ISTE (2014) - Substrate-dependent
thermal conductivity of aluminum nitride thin-films processed at low temperature
B.E. Belkerk, S. Bensalem, A. Soussou, M. Carette, H. Al Brithen, M. A. Djouadi, and Y. Scudeller
Applied Physics Letters 105, 221905 (2014) - GaN
high electron mobility transistors on silicon substrates with MBE/PVD AlN
seed layers
Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M.A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton and J.C. De Jaeger
Volume 11, Issue 3-4, 498-501, April 2014 - Integrated
Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors
M. Tchernycheva, A. Messanvi, A. de Luna Bugallo, G.Jacopin , P. Lavenus, L. Rigutti, H. Zhang, Y. Halioua , F.H. Julien, J. Eymery, C. Durand
Nano Letters 14, 3515 (2014) - Experimental
and theoretical analysis of transport properties of core-shell wire light
emitting diodes probed by electron beam induced current microscopy
P. Lavenus, I. Messanvi, L. Rigutti, A. De Luna Bugallo, H. Zhang, F. Bayle, F.H. Julien and J. Eymery
Nanotechnology 25 25: 255201-255221 (2014) - High-quality
NbN nanofilms on a GaN/AlN heterostructure
D. Sam-Giao, S. Pouget, C. Bougerol, E. Monroy, A. Grimm, S. Jebari, M. Hofheinz, J. M. Gerard and V. Zwiller
AIP Advances 4(10) (2014) - High
In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy:
Growth conditions, strain relaxation, and In incorporation kinetics
S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero, Y. Wang, M.P. Chauvat, P. Ruterana, S. Pouget, K.
Lorenz, E. Alves, and E. Monroy
Journal of Applied Physics 116, 233504 (2014); doi: 10.1063/1.4903944 - Near-infrared
gallium nitride two-dimensional photonic crystal platform on silicon
I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud.
Applied Physics Letters 105, 011104 (2014) - Molecular
beam epitaxy of ferromagnetic epitaxial GdN thin films
F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.-M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Crystal Growth 404, 146 (2014) - Magnetotransport
in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder
W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault
Eur. Phys. J. Appl. Phys. (2014) 68: 20102 DOI: 10.1051/epjap/2014140068 - Patterned silicon
substrates: A common platform for room temperature GaN and ZnO polariton
lasers
J. Zuniga-Perez, E. Mallet, R. Hahe, M.J. Rashid, ; S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gomme, T.; Guillet, O. Jamadi, X. Lafosse, M. Leroux, J.; Leymarie, F. Li, F. Reveret, F.Semond
APPLIED PHYSICS LETTERS, Volume: 104 Issue: 24, Article Number: 241113, DOI: 10.1063/1.4884120, Published: JUN 16 2014 - Influence
of excitonic oscillator strengths on the optical properties of GaN and ZnO
E. Mallet, F Reveret, P. Disseix, T.V. Shubina, J. Leymarie
PHYSICAL REVIEW B, Volume: 90 Issue: 4, Article Number: 045204, DOI: 10.1103/PhysRevB.90.045204, Published: JUL 14 2014 - The
universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN
heterostructures
D. Rosales, H.T. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattices Microstruct. 76 (2014) 9 - GaN
high electron mobility transistors on silicon substrates with MBE/PVD AlN
seed layers
Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, and J.-C. De Jaeger
Phys. Status Solidi C 11, No. 3–4 (2014) - Optical
amplifier based on guided polaritons in GaN and ZnO
D.D. Solnyshkov, H. Terças and G. Malpuech
App. Phys. Lett. 105, 231102 (2014) - High
quality thick InGaN nanostructures grown by nanoselective area growth for
new generation photovoltaic devices
S. Sundaram, P. Renaud, X. Li, Y. El Gmili, K. Panztas, G. Orsal, G. Patriache, J.P. Salvestrini, A. Ougazzaden
E-MRS Spring Meeting (2014) Lille France - Bandgap
energy bowing parameter of strained and relaxed InGaN layers
G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden, and J.P. Salvestrini
Optical Materials Express 4 (5), 1030 (2014) - Nanoscale
selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure
arrays
on GaN/sapphire template
S. Sundaram, R. Puybaret, Y. El Gmili, X. Li, P. L. Bonanno, K. Pantzas, G. Orsal, D. Troadec, Z.-H. Cai, G. Patriarche, P. L. Voss, J.P. Salvestrini, and A. Ougazzaden
Journal of Applied Physics 116, 163105 (2014) - AlGaN/GaN
HEMTs with very thin buffer on Si (111) for nanosystems applications
P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Théron and M. Faucher
Semicond. Sci. Technol. 29 115018 (2014) - Low loss GaN waveguides
for visible light on Si substrates
M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public. 9, 14xxx (2014) - Effect
of the quantum well thickness on the performance of InGaN photovoltaic cells
L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy
Applied Physics Letters 105 (2014) 131105
http://dx.doi.org/10.1063/1.4896679 - InGaN/GaN
Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based
P-Contact
M. Tchernycheva, P. Lavenus, H. Zhang, A.V. Babichev, G. Jacopin, M. Shahmohammadi, F.H. Julien, R. Ciechonski, G. Vescovi, et O. Kryliouk
Nano Lett. (2014) - Aluminum nitride
photonic crystals and microdiscs for ultra-violet nanophotonics
D. Néel, I. Roland, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond and P. Boucaud
Adv. Nat. Sci.: Nanosci. Nanotechnol. 5 (2014) 023001 (7pp) - High-Speed DC
Transport of Emergent Monopoles in Spinor Photonic Fluids
H. Terças, D.D. Solnyshkov and G. Malpuech
Phys. Rev. Lett. 113, 036403 (2014) - Hybrid Boltzmann
Gross-Pitaevskii Theory of Bose-Einstein Condensation and Superfluidity
in Open Driven-Dissipative Systems
D.D. Solnyshkov, H. Terças, K. Dini and G. Malpuech
Phys. Rev. A 89, 033626, (2014) - Non-Abelian
gauge fields in photonic cavities and photonic superfluids
H. Terças, H. Flayac, D.D. Solnyshkov and G. Malpuech
Phys. Rev. Lett. 112, 066402 (2014)
2013
- Imaging
of photonic modes in an AlN-based photonic crystal probed by an ultra-violet
internal light source
C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M.J. Rashid and F. Semond
OPTICS LETTERS 38, No. 23, 5059 (2013) - Magnetotransport
studies of AlGaN/GaN heterostructures with two dimensional electron gas
in parallel with a three-dimensional Al-graded layer: Incorrect hole type
determination
W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, Y. Cordier
J. Appl. Phys. 114, 023704 (2013). doi: 10.1063/1.4813220 - Multilayered
InGaN/GaN structure vs. single InGaN layer for solar cell applications:
A comparative study
Y. El Gmili, G. Orsal, K. Pantzas, T. Moudakir, S. Sundaram, G. Patriarche, J. Hester, A. Ahaitouf, J.P. Salvestrini, A. Ougazzaden
Acta Materialia 61, 6587 (2013) - Characteristics
of the surface microstructures in thick InGaN layers on GaN
Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, D. Troadec, J. P. Salvestrini, and A. Ougazzaden
Optical Materials Express 3 (8), 1111 (2013) - A
1 GHz SAW oscillator on epitaxial GaN/Si substrate: Toward co-integrated
frequency sources
M. Faucher, G. Martin, J.M. Friedt, S. Ballandras
S. European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint Digital Object Identifier: 10.1109/EFTF-IFC.2013.6702231 Publication Year: 2013, Page(s): 21 - 24 - Supersolidity
of spinor Bose-Einstein condensates
H. Flayac, H. Terças, D.D. Solnyshkov and G. Malpuech
Phys. Rev. B 88, 184503 (2013) - Role
of magnetic polarons in ferromagnetic GdN
F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vezian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer
PHYSICAL REVIEW B 87, 035202 (2013) - Imaging
and counting threading dislocations in c-oriented epitaxial
M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O.Tottereau and P.Vennéguès
Semicond. Sci. Technol. 28, 035006 (2013) - Exciton
decay through plasmon modes in planar metal-semiconductor structures
M.V. Durnev, A.V. Kavokin, and B. Gil
Phys. Rev. B 87, 195429 – Published 16 May 2013 - Excitons
in nitride heterostructures: From zero- to one-dimensional behavior
D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M. V. Durnev, and A. V. Kavokin
Phys. Rev. B 88, 125437 – Published 30 September 2013 - Aluminium nitride thin films deposition, properties
and applications
L. Le Brizoual, J. Camus, K. Ait Aissa, Q. Simon, P.Y. Jouan, M.A. Djouadi, Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, P. Vennéguès, S. Chenot, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
AVS 60th International Symposium, Long Beach, CA, USA, october 27-november 1, 2013 - AlGaN/GaN HEMTs on HR silicon substrate (111) with
an AlN seed film grown by PVD
P. Altuntas, N. Defrance, M. Lesecq, A. Cutivet, A. Agboton, Y. Cordier, M. Chmielowska, S. Rennesson, J. Camus, K. Ait Aissa, L. Le Brizoual, M.A. Djouadi, J.C. De Jaeger
Proceedings of 22nd European Workshop on Heterostructure Technology, HeTech 2013, Glasgow, Scotland, UK, september 9-11, 2013, paper 5.6, 1-2 - AlN/SI
interfaces properties revealed by broadband characterization of coplanar
waveguides
A. Cutivet, A. Agboton, P. Altuntas, F. Lecourt, M. Lesecq, N. Defrance, Y. Cordier, M. Chmielowska, S. Rennesson, J. Camus, K. Ait Aissa, L. Le Brizoual, M.A. Djouadi, J.C. De Jaeger, F. Boone, H. Maher
Proceedings of 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, Warnemünde, Germany, may 26-29, 2013, 37-38, ISBN 978-3-00-041435-0 - Electron
delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate
A. Agboton, N. Defrance, P. Altuntas, V. Avramovic , J.C. De Jaeger, S. Bouzid-Driad, H. Maher, M. Renvoise, P. Frijlink
Proceedings of 43rd European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, september 16-20, 2013 - Growth of GaN based heterostructures on silicon substrates
with MBE/PVD AlN seed layers
Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, P. Vennéguès, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M.A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Proceedings of 10th International Conference on Nitride Semiconductors, ICNS-10, Washington, DC, USA, august 25-30, 2013, paper AP1.73, to be published in Physica Status Solidi - Epitaxial
growth of AlN thin films at low temperature by magnetron sputtering technique
J. Camus, Q. Simon, K. Ait Aissa, S. Bensalem, L. Le Brizoual, G. Tessier, Y. Scudeller, M.A. Djouadi, Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, P. Vennéguès, S. Chenot, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet., A. Agboton, J.C. De Jaeger
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, Strasbourg, France, may 27-31, 2013
Brevets
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